The structural and optical properties of SiO2/Si rich SiNx multilayers containing Si-ncs

Nanotechnology

Volumn 20, Issue 27, 2009, Pages

  Delachat, F ^a   Carrada, M ^a   Ferblantier, G ^a   Grob, J J ^a   Slaoui, A ^a   Rinnert, H ^b  

^a Faculté de Médecine   (France)

^b INSTITUT JEAN LAMOUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CONFINEMENT MODEL; CRYSTALLINE SI; ECR-PECVD; HIGH TEMPERATURE; NANO-METER SCALE; PHOTOLUMINESCENCE MEASUREMENTS; RAMAN MEASUREMENTS; SI ATOMS; SI NANOCRYSTAL; SILICON DIOXIDE; SILICON RICH; SILICON SUBSTRATES; STRUCTURAL AND OPTICAL PROPERTIES;

CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MULTILAYERS; OPTICAL MULTILAYERS; OPTICAL PROPERTIES; OXIDE MINERALS; PLASMA DEPOSITION; QUARTZ; SEMICONDUCTOR QUANTUM WELLS; SILICA; SILICON; SILICON NITRIDE; SILICON OXIDES;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

NANOCRYSTAL; SILICON; SILICON DIOXIDE; SILICON NITRIDE;

ARTICLE; CRYSTALLIZATION; CYCLOTRON; FILM; HIGH TEMPERATURE; MEASUREMENT; MODEL; PARTICLE SIZE; PHOTOLUMINESCENCE; PRIORITY JOURNAL; RAMAN SPECTROMETRY; STRUCTURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 67649379089     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/27/275608     Document Type: Article

References (21)

1. Pavesi L, Dal Negro L, Mazzoleni C, Franzo G and Priolo F 2000 Optical gain in silicon nanocrystalst Nature 408 440-4
2. x dielectric J. Appl. Phys. 101 14325
3. Conibeer G et al 2008 Silicon quantum dot nanostructures for tandem photovoltaic cells Thin Solids films 516 6748-56
4. 2 superlattice approach Appl. Phys. Lett. 80 661-3
5. 3 Appl. Phys. Lett. 88 123102
6. 2 single quantum wells by selective excitation Phys. Rev. B 56 R15561-4
7. Wolkin M V, Jorne J, Fauchet P M, Allan G and Delerue C 1999 Electronic states and luminescence in porous silicon quantum dots: the role of oxygen Phys. Rev. Lett. 82 197-200 (Pubitemid 129661984)
8. x:H by remote PECVD and annealing Mater. Sci. Eng. B 147 218-21 (Pubitemid 351179198)
9. Scardera G, Puzzer T, Conniber G I and Green M A 2008 Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films J. Appl. Phys. 104 104310
10. 2 buffer and annealing Appl. Phys. Lett. 89 251904
11. Hao H L, Wu L K, Shen W Z and Dekkers H F W 2007 Origin of visible luminescence in hydrogenated amorphous silicon nitride Appl. Phys. Lett. 91 201992
12. Tsu R, Gonzalez-Hernandez J, Chao S S, Lee S C and Tanaka K 1982 Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloys Appl. Phys. Lett. 40 534-5
13. He Y, Yin C, Cheng G, Wang L and Liu X 1994 The structure and properties of nanosize crystalline silicon films J. Appl. Phys. 75 797-803
14. Zi J, Büscher H, Falter C, Ludwig W, Zhang K and Xide X 1996 Raman shifts in Si nanocrystals Appl. Phys. Lett. 69 200-2 (Pubitemid 126622239)
15. Cheng W and Ren S-F 2002 Calculations on the size effects of Raman intensities of silicon quantum dots Phys. Rev. B 65 205305
16. Faraci G, Russo P and Pennisi A R 2006 Modified Raman confinement model for Si nanocrystals Phys. Rev. B 73 033307
17. 2 core shell clusters probed by Raman spectroscopy Eur. Phys. J. B 46 457-61 (Pubitemid 41312570)
18. x multilayers Physica E 41 994-7
19. Kanemitsu Y 1994 Luminescence properties of nameter-sized crystallites: core and surface states Phys. Rev. B 49 16845-8
20. 4 Appl. Phys. Lett. 86 091908
21. Cho E-C et al 2007 Silicon quantum dots in a dielectric matrix for all-silicon tandem solar cells Adv. OptoElectron. 2007 69578