High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 2, 2007, Pages 257-261

  Hung, B F ^a   Wu, C H ^b   Chin, Albert ^a   Wang, S J ^b   Yen, F Y ^c   Hou, Y T ^c   Jin, Y ^c   Tao, H J ^c   Chen, Shih C ^c   Liang, Mong Song ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Full silicidation (FUSI); HfSiON; IrxSi

Indexed keywords

FERMI LEVEL; GATES (TRANSISTOR); HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; VLSI CIRCUITS;

FERMI-LEVEL PINNING; FULL SILICIDATION;

MOSFET DEVICES;

EID: 33847640079     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.888626     Document Type: Article

References (17)

1. J. K. Schaeffer, C. Capasso, L. R. C. Fonseca, S. Samavedam, D. C. Gilmer, Y. Liang, S. Kalpat, B. Adetutu, H.-H. Tseng, Y. Shiho, A. Demkov, R. Hegde, W. J. Taylor, R. Gregory, J. Jiang, E. Luckowski, M. V. Raymond, K. Moore, D. Triyoso, D. Roan, B. E. White, Jr., and P. J. Tobin, "Challenges for the integration of metal gate electrodes," in IEDM Tech. Dig., 2004, pp. 287-290.
2. 2 stack," in IEDM Tech. Dig., 2004, pp. 821-824.
3. 2) polysilicon: A novel approach to very low-resistive gate (∼2Ω/□) without metal CMP nor etching," in IEDM Tech. Dig., 2001, pp. 815-828.
4. W. P. Maszara, Z. Krivokapic, P. King, J. S. Goollgweon, and M. R. Lin, "Transistors with dual work function metal gate by single full silicidation (FUSI) of polysilicon gates," in IEDM Tech. Dig., 2002, pp. 367-370.
5. x (N) pMOSFET," in IEDM Tech. Dig., 2004, pp. 83-86.
6. K. Takahashi, K. Manabe, T. Ikarashi, N. Ikarashi, T. Hase, T. Yoshihara, H. Watanabe, T. Tatsumi, and Y Mochizuki, "Dual workfunction Ni-silicide/HfSiON gate stacks by phase-controlled full-silicidation (PC-FUSI) technique for 45 nm-node LSTP and LOP devices," in IEDM Tech. Dig., 2004, pp. 91-94.
7. xSi gates on HfAlON p-MOSFETs," IEEE Electron Device Lett., vol. 27, no. 2, pp. 90-92, Feb. 2006.
8. D. S. Yu, A. Chin, C. H. Wu, M.-F. Li, C. Zhu, S. J. Wang, W. J. Yoo, B. F. Hung, and S. P. McAlister, "Lanthanide and Ir-based dual metalgate/HfAlON CMOS with large work-function difference," in IEDM Tech. Dig., 2005, pp. 649-652.
9. 3/Ge-on-insulator MOSFETs," in IEDM Tech. Dig., 2003, pp. 319-322.
10. M. Koyama, Y. Kamimuta, T. Ino, A. Kaneko, S. Inumiya, K. Eguchi, M. Takayanagi, and A. Nishiyama, "Careful examination on the asymmetric Vfb shift problem for Poly-Si/HfSiON gate stack and its solution by the Hf concentration control in the dielectric near the Poly-Si interface with small EOT expense," in IEDM Tech. Dig., 2004, pp. 499-502.
11. H. B. Michaelson, "The work function of the elements and its periodicity," J. Appl. Phys., vol. 48, no. 11, pp. 4729-4733, Nov. 1977.
12. th and good retention," in VLSI Symp. Tech. Dig., 2005, pp. 210-211.
13. K. C. Chiang, A. Chin, C. H. Lai, W. J. Chen, C. F. Cheng, B. F. Hung, and C. C. Liao, "Very high-κ and high density TiTaO MIM capacitors for analog and RF applications," in VLSI Symp. Tech. Dig., 2005, pp. 62-63.
14. 3 gate dielectric on Si," J. Electrochem. Soc., vol. 151, no. 10, pp. G693-G696, Oct. 2004.
15. Y. H. Lin, F. M. Pan, Y. C. Liao, Y. C. Chen, I. J. Hsieh, and A. Chin, "The Cu contamination effect in oxynitride gate dielectrics," J. Electrochem. Soc., vol. 148, no. 11, pp. G627-G629, Nov. 2001.
16. Y. T. Hou, F. Y. Yen, P. F. Hsu, V. S. Chang, P. S. Lim, C. L. Hung, L. G. Yao, J. C. Jiang, H. J. Lin, Y. Jin, S. M. Jang, H. J. Tao, S. C. Chen, and M. S. Liang, "High performance tantalum carbide metal gate stacks for nMOSFET application," in IEDM Tech. Dig., 2005, pp. 35-39.
17. A. L. P. Rotondaro, M. R. Visokay, J. J. Chambers, A. Shanware, R. Khamankar, H. Bu, R. T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M. J. Bevan, T. Grider, J. McPherson, and L. Colombo, "Advanced CMOS transistors with a novel HfSiON gate dielectric," in VLSI Symp. Tech. Dig., 2002, pp. 148-149.