Charge retention loss in a HfO2 dot flash memory via thermally assisted tunneling

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 109-110

  Wang, Tahui ^a   Ma, H C ^a   Li, C H ^a   Lin, M ^a   Chien, C H ^a   Lei, T F ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Charge retention loss; Hafnium oxide HfO2 dot flash; Thermally activated tunneling

Indexed keywords

DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS;

CHARGE RETENTION LOSS; DIELECTRIC DOT FLASH MEMORY; HAFNIUM OXIDE; THERMALLY ACTIVATED TUNNELING;

FLASH MEMORY;

EID: 37549049330     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.910785     Document Type: Article

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