n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 432-435

  Park, C H ^a   Lee, J Y ^a   Im, S ^a   Kim, T G ^b  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Implantation; Isolation; Leakage current; Photodiode

Indexed keywords

LASER APPLICATIONS; LEAKAGE CURRENTS; LIGHTING; PHOTODIODES; QUANTUM EFFICIENCY; SILICON; ZINC OXIDE;

ISOLATION TECHNIQUES;

ION BEAMS;

EID: 0037737633     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00786-9     Document Type: Conference Paper

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