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Volumn 24, Issue 8, 2008, Pages 1002-1004

Influence of ZnO homobuffer layer on n-ZnO/p-Si photodiode

Author keywords

Buffer layer; n ZnO p Si photoiode; Pulsed laser deposition

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; IMAGING TECHNIQUES; LEAKAGE CURRENTS; METALLIC FILMS; MICROSCOPIC EXAMINATION; NONMETALS; OPTICAL DESIGN; OPTICAL WAVEGUIDES; OXYGEN; PHOTODIODES; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SCANNING PROBE MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SILICON; XENON; ZINC ALLOYS;

EID: 52649145482     PISSN: 02670836     EISSN: None     Source Type: Journal    
DOI: 10.1179/174328407X161286     Document Type: Article
Times cited : (3)

References (15)
  • 15
    • 0003872707 scopus 로고
    • 4th edn, Beijing, National Defense Industry Press
    • E. K. Liu, B. S. Zhu and J. S. Luo: 'Semiconductor physics', 4th edn, 239-244; 1994, Beijing, National Defense Industry Press.
    • (1994) Semiconductor physics , pp. 239-244
    • Liu, E.K.1    Zhu, B.S.2    Luo, J.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.