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Volumn 24, Issue 8, 2008, Pages 1002-1004
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Influence of ZnO homobuffer layer on n-ZnO/p-Si photodiode
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Author keywords
Buffer layer; n ZnO p Si photoiode; Pulsed laser deposition
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
BUFFER LAYERS;
EPITAXIAL GROWTH;
HETEROJUNCTION BIPOLAR TRANSISTORS;
IMAGING TECHNIQUES;
LEAKAGE CURRENTS;
METALLIC FILMS;
MICROSCOPIC EXAMINATION;
NONMETALS;
OPTICAL DESIGN;
OPTICAL WAVEGUIDES;
OXYGEN;
PHOTODIODES;
PULSED LASER APPLICATIONS;
PULSED LASER DEPOSITION;
SCANNING PROBE MICROSCOPY;
SEMICONDUCTING ZINC COMPOUNDS;
SILICON;
XENON;
ZINC ALLOYS;
BUFFER LAYER;
CRYSTALLINITY;
CURRENT-VOLTAGE MEASUREMENTS;
HETEROJUNCTION PHOTODIODES;
N-ZNO/P-SI PHOTOIODE;
PHOTO-RESPONSIVITY;
SI SUBSTRATE;
THIN LAYERING;
X-RAY DIFFRACTION;
XE ARC LAMPS;
ZNO FILMS;
ZNO/P-SI;
ZINC OXIDE;
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EID: 52649145482
PISSN: 02670836
EISSN: None
Source Type: Journal
DOI: 10.1179/174328407X161286 Document Type: Article |
Times cited : (3)
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References (15)
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