Intrinsic reliability of amorphous silicon thin film solar cells

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 312-317

  Alam, M A ^a   Dongaonkar, S ^a   Karthik, Y ^a   Mahapatra, S ^a   Wang, D ^b   Frei, M ^b  

^a PURDUE UNIVERSITY   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON THIN FILMS; BULK DEFECTS; CMOS RELIABILITY; DEGRADATION PROCESS; ELECTRON-HOLE RECOMBINATION; INDUCED DISSOCIATION; LIGHT-INDUCED DEGRADATION; METAL-SEMICONDUCTOR-METAL STRUCTURES; PHYSICAL PHENOMENA; PMOS TRANSISTORS; SI-H BONDS; SPACE-CHARGE LIMITED;

AMORPHOUS FILMS; AMORPHOUS SILICON; DISSOCIATION; GATE DIELECTRICS; GATES (TRANSISTOR); RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS;

DEGRADATION;

EID: 77957930500     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488810     Document Type: Conference Paper

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