On the origin of leakage current reduction in TiO2 passivated porosus silicon Schottky-barrier diode

Applied Physics Letters

Volumn 96, Issue 6, 2010, Pages

  Hwang, J D ^a   Chou, C H ^b  

^a NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^b DA YEH UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; LEAKAGE CURRENT REDUCTION; NATIVE OXIDES; NON-BRIDGING OXYGEN; NON-STOICHIOMETRIC SI; O-H BOND; OH FORMATION; SURFACE STATE; TIO;

LEAKAGE CURRENTS; MIXER CIRCUITS; OXYGEN; PASSIVATION; POROUS SILICON; SILICON OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76749146477     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309717     Document Type: Article

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