Investigation of the Causes and Variation of Leakage Currents in Amorphous Silicon P-I-N Diodes

Materials Research Society Symposium - Proceedings

Volumn 762, Issue , 2003, Pages 381-386

  Johnson, Todd R ^b   Ganguly, Gautam ^a   Wood, George S ^a   Carlson, David E ^a  

^a BP Solar   (United States)

^b PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; HYDROGENATION; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MICROSCOPIC EXAMINATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POINT DEFECTS; SEMICONDUCTOR DIODES; SILICON SOLAR CELLS; THERMAL CONDUCTIVITY; THIN FILMS; ZINC OXIDE;

SHUNT CAUSING DEFECTS; SHUNT DISTRIBUTION;

AMORPHOUS SILICON;

EID: 1642541227     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-762-a7.7     Document Type: Conference Paper

References (5)

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