Hot spots in multicrystalline silicon solar cells: Avalanche breakdown due to etch pits

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 2-3, 2009, Pages 40-42

  Bauer, J ^a   Wagner, J M ^a   Lotnyk, A ^a   Blumtritt, H ^a   Lim, B ^b   Schmidt, J ^b   Breitenstein, O ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE BREAKDOWN; AVALANCHE MULTIPLICATION; ETCH PITS; FIELD ENHANCEMENT; HARD BREAKDOWN; HOT SPOT; LOCKIN THERMOGRAPHY; MULTI-CRYSTALLINE SILICON SOLAR CELLS; P-N JUNCTION; SHAPED HOLES; SYSTEMATIC STUDY;

HETEROJUNCTION BIPOLAR TRANSISTORS; POLYSILICON; REMOTE SENSING; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

SILICON SOLAR CELLS;

EID: 70349643144     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200802250     Document Type: Article

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