Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device

Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

  Won Seo, Jung ^a   Baik, Seung Jae ^a   Kang, Sang Jung ^a   Hong, Yun Ho ^a   Yang, Ji Hwan ^a   Fang, Liang ^a   Lim, Koeng Su ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI LAYERS; CONDUCTING FILAMENT; DATA RETENTION; NON-VOLATILE; NON-VOLATILE MEMORY APPLICATION; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SWITCHING DEVICES;

ELECTROFORMING; FILAMENTS (LAMP); SWITCHING SYSTEMS;

AMORPHOUS SILICON;

EID: 76449119035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3308471     Document Type: Article

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