Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors

Microelectronics Reliability

Volumn 49, Issue 1, 2009, Pages 1-7

  Lau, W S ^a   Yang, Peizhen ^a   Chian, Jason Zhiwei ^a   Ho, V ^b   Loh, C H ^b   Siah, S Y ^b   Chan, L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; DRAIN CURRENT; MOSFET DEVICES; STATISTICAL MECHANICS; THERMAL NOISE; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; VELOCITY;

BALLISTIC TRANSPORT THEORIES; CURRENT SATURATIONS; EXPERIMENTAL OBSERVATIONS; GATE LENGTHS; HIGH DRAIN VOLTAGES; MOS TRANSISTORS; PINCH OFFS; SEMICONDUCTOR TRANSISTORS; VELOCITY SATURATIONS;

TRANSISTORS;

EID: 58149136202     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.10.006     Document Type: Article

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