Drift diffusion and Einstein relation for electrons in silicon subjected to a high electric field

Applied Physics Letters

Volumn 80, Issue 20, 2002, Pages 3763-3765

  Arora, Vijay K ^a  

^a WILKES UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; DC CONDITIONS; DRIFT DIFFUSION; DRIFT-DIFFUSION PROCESS; EINSTEIN RELATIONS; EMPIRICAL RELATIONS; EXPERIMENTAL DATA; HIGH ELECTRIC FIELDS; HIGH-FIELD; MEAN-FREE PATH; MODELING DEVICES; OPTICAL PHONONS; PERFORMANCE EVALUATION; SATURATION VELOCITY; SUBMICRON SCALE; THINKING PROCESS;

DIFFUSION; ELECTRIC FIELDS; ELECTRON TEMPERATURE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955982418     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480119     Document Type: Article

References (5)

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2. J. Appl. Phys. 54, 824 (1983). jap JAPIAU 0021-8979
3. V. K. Arora, Microelectron. J. 31, 853 (2000). mij MICEB9 0026-2692
4. S. M. Sze, Semiconductor Devices: Physics and Technology (Wiley, New York, 1985), p. 41.
5. M. Ali Omar and L. Reggiani, Solid-State Electron. 30, 693 (1987). sel SSELA5 0038-1101