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Journal of Vacuum Science and Technology B

Volumn 28, Issue 4, 2010, Pages

Cross-sectional scanning tunneling microscopy and spectroscopy of nonpolar GaN (11̄00) surfaces

(5) Eisele, H a Borisova, S b Ivanova, L a Dahne M a Ebert, P H b

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; DEFECT DENSITY; DEFECT STATES; ELECTRON TUNNELING; GALLIUM NITRIDE; III-V SEMICONDUCTORS; SCANNING TUNNELING MICROSCOPY; SURFACE DEFECTS;

BANDS EDGES; CLEAVAGE SURFACES; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; FERMI LEVEL PINNING; FUNDAMENTAL BAND GAP; INTRINSIC SURFACES; NON-POLAR; SCANNING TUNNELLING MICROSCOPY AND SPECTROSCOPY; SURFACE BRILLOUIN ZONES; TUNNEL CURRENTS;

SURFACE STATES;

EID: 77957235548 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3456166 Document Type: Conference Paper

Times cited : (8)

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