Doping modulation in GaN imaged by cross-sectional scanning tunneling microscopy

Applied Physics Letters

Volumn 94, Issue 16, 2009, Pages

  Eisele, H ^a   Ivanova, L ^a   Borisova, S ^b   Dahne M ^a   Winkelnkemper, M ^a   Ebert, Ph ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE ENERGIES; CLEAVAGE SURFACES; CONSTANT CURRENTS; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; HEIGHT MODULATIONS; IMAGING MECHANISMS; INDUCED STRAINS; MECHANICAL RELAXATIONS; SI-DOPING; STM IMAGES;

GALLIUM ALLOYS; GALLIUM NITRIDE; MECHANISMS; MODULATION; SCANNING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SURFACE RELAXATION;

SCANNING TUNNELING MICROSCOPY;

EID: 65449116469     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3123258     Document Type: Article

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