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Volumn 62, Issue 4, 2000, Pages 2681-2685

Origin of optical anisotropies of nonpolar GaN surfaces

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EID: 4243979919     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.62.2681     Document Type: Article
Times cited : (12)

References (26)
  • 26
    • 15744364543 scopus 로고    scopus 로고
    • We have performed DFT calculations without quasiparticle corrections for the Si(111)-(Formula presented) surface. We have found that a rigid energy shift of 0.9 eV for the bulk conduction states, and a rigid energy shift of 0.3 eV for the surface unoccupied states, give the same energies when a quasiparticle correction is employed, such as that reported by M. Rohlfing and S.G. Louie, Phys. Rev. Lett. 83, 856 (1999).
    • (1999) Phys. Rev. Lett. , vol.83 , pp. 856
    • Rohlfing, M.1    Louie, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.