Native defects in oxide semiconductors: A density functional approach

Journal of Physics Condensed Matter

Volumn 22, Issue 38, 2010, Pages

  Oba, Fumiyasu ^a   Choi, Minseok ^a   Togo, Atsushi ^a   Seko, Atsuto ^a   Tanaka, Isao ^b  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN FINE CERAMICS CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; ACCEPTOR LEVELS; CARRIER GENERATION; DEEP LEVEL; DENSITY-FUNCTIONAL STUDY; ELECTRICAL AND OPTICAL PROPERTIES; FORMATION ENERGIES; HARTREE-FOCK; IN-GAP STATE; INDUCED PROPERTIES; INTERMEDIATE COMPOUND; N-TYPE CONDUCTIVITY; NATIVE DEFECT; NON-STOICHIOMETRY; OXIDE SEMICONDUCTOR; P-TYPE; RICH CONDITIONS; SHALLOW DONORS; SRTIO; ZNO;

DEFECTS; ELECTRIC PROPERTIES; STRONTIUM ALLOYS; TIN; ZINC; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 77957205326     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/38/384211     Document Type: Article

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