Progress of resist materials and process for hp 2x-nm devices using EUV lithography

Journal of Photopolymer Science and Technology

Volumn 23, Issue 5, 2010, Pages 613-618

  Matsunaga, Kentaro ^a   Oizumi, Hiroaki ^a   Kaneyama, Koji ^a   Shiraishi, Gousuke ^a   Matsumaro, Kazuyuki ^a   Santillan, Julius Joseph ^a   Itani, Toshiro ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Developer concentration; EUV lithography; Pattern collapse; Resist thickness; Rinse solution; TBAH; Underlayer

Indexed keywords

EID: 77957173390     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.23.613     Document Type: Article

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