Development process for chemically amplified resist by KrF imaging

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6884-6887

  Matsunaga, Kentaro ^a   Kawamura, Daisuke ^a   Mimotogi, Shoji ^a   Azuma, Tsukasa ^a   Onishi, Yasunobu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Chemically amplified resist; Developer concentration; Development condition; Development time; Dissolution rate; Surfactant

Indexed keywords

EID: 0141508765     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6884     Document Type: Article

References (12)

1. C. M. Graza and C. R. Szmanda: Proc. SPIE 920 (1988) 321
2. C. Zee, W. R. Bell and A. R. Neureuther: Proc. SPIE 920 (1988) 154
3. C. G. E. Flores and J. E. Loftus: Proc. SPIE 1672 (1992) 317
4. H. Shimada, M. Onodera, S. Shimomura, K. Hirose and T. Ohmi: J. Electronchem. Soc. 139 (1992) No. 6 1721
5. S. Shimomura, H. Shimada, R. Au, M. Miyawaki and T. Ohmi: Proc. SPIE 1925 (1993) 602
6. H. Shimada. S. Shimomura, K. Hirose and T. Ohmi: Jpn. J. Appl. Phys. 32 (1993) 347
7. H. Shimada, M. Onodera, T. Nonaka, K. Hirose and T. Ohmi: IEEE Trans. Semicond. Manuf. 6 (1993) No. 3 269
8. H. Shimada, T. Iwamoto, S. Shomomura, M. Onodera, and T. Ohmi: Proc. SPIE 2195 (1994) 813
9. Y. Onishi, N. Oyasato, H. Niki, R. H. Hayase, Y. Kobayashi, K. Sato and M. Miyamura: J. Photopolym. Sci. Technol. 5 (1992) 47
10. J. S. Greencich: J. Appl. Phys. 45 (1974) 5264
11. M. P. C. Watts: J. Vac. Sci. & Technol. B 3 (1985) 434
12. C. A. Mack: Proc. SPIE 2197 (1994) 501