Current-induced recrystallization of polycrystalline silicon nano thin films deposited at different temperatures and its influences on piezoresistive sensitivity and temperature coefficients

Sensors and Actuators, A: Physical

Volumn 162, Issue 2, 2010, Pages 284-290

  Shi, Chang Zhi ^a   Liu, Xiao Wei ^a   Chuai, Rong Yan ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b SHENYANG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Current induced recrystallization; Deposition temperature; Electrical trimming; Gauge factor; Piezoresistive; Polycrystalline silicon; Temperature coefficient of gauge factor; Temperature coefficient of resistance

Indexed keywords

DEPOSITION TEMPERATURES; ELECTRICAL TRIMMING; GAUGE FACTORS; PIEZO-RESISTIVE; POLY-CRYSTALLINE SILICON; RECRYSTALLIZATIONS; TEMPERATURE COEFFICIENT OF GAUGE FACTOR; TEMPERATURE COEFFICIENT OF RESISTANCE;

GAGES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; ION SENSITIVE FIELD EFFECT TRANSISTORS; POLYCRYSTALLINE MATERIALS; POLYSILICON; RECRYSTALLIZATION (METALLURGY); RESISTORS; SENSORS; THIN FILMS; TRIMMING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957133352     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2010.02.004     Document Type: Conference Paper

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