The effect of current pulse annealing on the electrical properties of polycrystalline p-Si

Semiconductors

Volumn 39, Issue 2, 2005, Pages 177-181

  Gridchin, V A ^a   Lubimskii V M ^a  

^a NOVOSIBIRSK STATE TECHNICAL UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 17044397267     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1864194     Document Type: Article

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