Electrical trimming of boron-doped polysilicon nanofilm resistors deposited at different temperatures

Advanced Materials Research

Volumn 60-61, Issue , 2009, Pages 361-366

  Shi, Changzhi ^a,b   Liu, Xiaowei ^a,b   Chuai, Rongyan ^c  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^c SHENYANG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Deposition temperature; Electrical trimming; Interstitial vacancy pair; Polysilicon nanofilm; Threshold current density

Indexed keywords

BORON; DEPOSITION; GRAIN BOUNDARIES; NANOSENSORS; NANOTECHNOLOGY; POLYCRYSTALLINE MATERIALS; POLYSILICON; THRESHOLD CURRENT DENSITY;

DEPOSITION TEMPERATURES; HIGH GAUGE FACTORS; INTERSTITIAL-VACANCY PAIR; PIEZO-RESISTIVE SENSORS; POLYSILICON NANOFILM; RESISTANCE MATCHING; SCATTERING CENTERS; TEMPERATURE CHARACTERISTIC;

TRIMMING;

EID: 71849107508     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/amr.60-61.361     Document Type: Conference Paper

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