Precision electrical trimming of very low TCR poly-SiGe resistors

IEEE Electron Device Letters

Volumn 21, Issue 6, 2000, Pages 283-285

  Babcock, J A ^a,b   Francis, P ^c   Bashir, R ^f   Kabir, A E ^c   Schroder, D K ^a   Lee, M S L ^c,e   Dhayagude, T ^c   Yindeepol, W ^c   Prasad, S J ^c   Kalnitsky, A ^d   Thomas, M E ^c   Haggag, H ^c   Egan, K ^c   Bergemont, A ^c   Jansen, P ^g  

^a Arizona State University   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^d MAXIM INTEGRATED PRODUCTS   (United States)

^e ADVANCED MICRO DEVICES   (United States)

^f PURDUE UNIVERSITY   (United States)

^g IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE; POLYCRYSTALLINE MATERIALS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON COMPOUNDS;

PRECISION ELECTRICAL TRIMMING; TEMPERATURE COEFFICIENT OF RESISTANCE (TCR);

RESISTORS;

EID: 0033747883     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.843151     Document Type: Article

References (14)

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9. private communication.
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