Channel length and threshold voltage dependence of transistor mismatch in a 32-nm HKMG technology

IEEE Transactions on Electron Devices

Volumn 57, Issue 10, 2010, Pages 2440-2447

  Hook, Terence B ^a   Johnson, Jeffrey B ^a   Han, Jin Ping ^b   Pond, Andrew ^a   Shimizu, Takashi ^c   Tsutsui, Gen ^a  

^a IBM MICROELECTRONICS   (United States)

^b INFINEON TECHNOLOGIES   (United States)

^c RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Doping; field effect transistors; simulation

Indexed keywords

ANALOG APPLICATIONS; CHANNEL LENGTH; DATA ANALYSIS; DOPING; LOW THRESHOLDS; RANDOM DOPANT FLUCTUATION; SIMULATION; STANDARD DEVIATION; TRANSISTOR MISMATCH; VOLTAGE DEPENDENCE;

DATA REDUCTION; DOPING (ADDITIVES); THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 77956988062     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2057193     Document Type: Article

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