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Volumn 95, Issue 6, 2009, Pages

Effect of threshold voltage instability on field effect mobility in thin film transistors deduced from constant current measurements

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT CURRENT; CONVENTIONAL METHODS; EMERGING MATERIALS; FIELD EFFECTS; FIELD-EFFECT MOBILITIES; MEASURING DEVICE; STATIC CHARACTERISTIC; STATIC MEASUREMENTS; THRESHOLD VOLTAGE SHIFTS; TRANSIENT PHENOMENON;

EID: 69049120329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3195641     Document Type: Article
Times cited : (3)

References (11)
  • 2
    • 34848874033 scopus 로고    scopus 로고
    • Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric
    • DOI 10.1063/1.2784008
    • M. R. Esmaeili-Rad, F. Li, A. Sazonov, and A. Nathan, J. Appl. Phys. 0021-8979 102, 064512 (2007). 10.1063/1.2784008 (Pubitemid 47508993)
    • (2007) Journal of Applied Physics , vol.102 , Issue.6 , pp. 064512
    • Esmaeili-Rad, M.R.1    Li, F.2    Sazonov, A.3    Nathan, A.4
  • 3
    • 33845936791 scopus 로고    scopus 로고
    • Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities
    • DOI 10.1063/1.2408630
    • C. H. Lee, A. Sazonov, A. Nathan, and J. Robertson, Appl. Phys. Lett. 0003-6951 89, 252101 (2006). 10.1063/1.2408630 (Pubitemid 46035138)
    • (2006) Applied Physics Letters , vol.89 , Issue.25 , pp. 252101
    • Lee, C.-H.1    Sazonov, A.2    Nathan, A.3    Robertson, J.4
  • 4
    • 23644455993 scopus 로고    scopus 로고
    • Low-temperature materials and thin film transistors for flexible electronics
    • DOI 10.1109/JPROC.2005.851497
    • A. Sazonov, D. Striakhilev, C. H. Lee, and A. Nathan, Proc. IEEE 0018-9219 93, 1420 (2005). 10.1109/JPROC.2005.851497 (Pubitemid 41130258)
    • (2005) Proceedings of the IEEE , vol.93 , Issue.8 , pp. 1420-1428
    • Sazonov, A.1    Striakhilev, D.2    Lee, C.-H.O.3    Nathan, A.4
  • 5
    • 0026909116 scopus 로고
    • 0268-1242,. 10.1088/0268-1242/7/8/013
    • N. D. Young and A. Gill, Semicond. Sci. Technol. 0268-1242 7, 1103 (1992). 10.1088/0268-1242/7/8/013
    • (1992) Semicond. Sci. Technol. , vol.7 , pp. 1103
    • Young, N.D.1    Gill, A.2
  • 7
  • 11
    • 51149208894 scopus 로고    scopus 로고
    • Charge trapping and device behavior in ferroelectric memories
    • DOI 10.1063/1.116273, PII S0003695196034195
    • C. H. Seager, D. C. McIntyre, W. L. Warren, and B. A. Tuttle, Appl. Phys. Lett. 0003-6951 68, 2660 (1996). 10.1063/1.116273 (Pubitemid 126683860)
    • (1996) Applied Physics Letters , vol.68 , Issue.19 , pp. 2660-2662
    • Seager, C.H.1    Mcintyre, D.C.2    Warren, W.L.3    Tuttle, B.A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.