Stress-induced width-dependent degradation of low-temperature polycrystalline silicon thin-film transistor

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Hsieh, Szu I ^a   Liang, Hsing Yi ^c   Lin, Chrong Jung ^c   King, Ya Chin ^c   Chen, Hung Tse ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; HOT ELECTRONS; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; POLYSILICON; STRESS ANALYSIS;

GLASS SUBSTRATES; HOT ELECTRON STRESS; SEQUENTIAL LATERAL SOLIDIFIED (SLS); SUBTHRESHOLD DEGRADATION;

THIN FILM TRANSISTORS;

EID: 34247882855     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734504     Document Type: Article

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