Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys

Journal of Applied Physics

Volumn 99, Issue 1, 2006, Pages

  Westmeyer, A N ^a   Mahajan, S ^a   Bajaj, K K ^a,e   Lin, J Y ^b   Jiang, H X ^b   Koleske, D D ^c   Senger, R T ^d  

^a Arizona State University   (United States)

^b KANSAS STATE UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d BILKENT UNIVERSITY   (Turkey)

^e EMORY UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DELOCALIZED EXCITON MODEL; ENERGY-BAND OFFSETS; EXCITONIC LUMINESCENCE TRANSITION; POTENTIAL FLUCTUATIONS;

ALUMINUM NITRIDE; ELECTRONS; EXCITONS; GALLIUM NITRIDE; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

BAND STRUCTURE;

EID: 30844439160     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2158492     Document Type: Article

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