Chapter 10 GaN and AlGaN Ultraviolet Detectors

Semiconductors and Semimetals

Volumn 57, Issue C, 1999, Pages 407-439

  Shur, M S ^a   Khan, M Asif ^b  

^a Center for Integrated Electronics and Electronics Manufacturing   (United States)

^b The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; SEMICONDUCTOR ALLOYS;

III-V SEMICONDUCTORS;

EID: 77956688255     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62623-X     Document Type: Chapter

References (42)

1. Binet F., Duboz J.Y., Laurent N., Rosencher E., Briot O., and Aulombard R.L. J. Appl. Phys. 81 (1997) 6449
2. Carrano J.C., Grudowski P.A., Eiting C.J., Dupuis R.D., and Campbell J.C. Appl. Phys. Lett. 70 (1997) 1992
3. Carrano J.C., Grudowski P.A., Eiting C.J., Dupuis R.D., and Campbell J.C. Appl. Phys. Lett. 72 5 (1998) 542-544
4. Chen Q., Khan M.A., Sun C.G., and Yang J.W. Electronics Letters 31 (1995) 1781
5. Chen Q., Yang J.W., Osinsky A., Gangopadhyay S., Lim B., Anwar M.Z., and Khan M.A. Schottky barrier detectors on GaN for visible-blind ultraviolet detection. Appl. Phys. Lett. 70 17 (1997) 2277-2279
6. Fan Z.-F., Mohammad S.N., KimAktas W., ÖBotchkarev A.E., and Morkoç H. Appl. Phys. Lett. 68 (1996) 1672
7. Foresi S., and Moustakos T.D. Appl. Phys. Lett. 62 (1993) 2859
8. Edmond J.A., Kong H.S., and Carter Jr. C.H. Phys. B 185 (1993) 453
9. Johnson C., Lin J.Y., Jiang H.X., Khan M.A., and Sun C.J. Metastability and persistent photoconductivity in Mg-doped p-type GaN. Appl. Phys. Lett. 68 13 (1996) 1808-1810
10. Khan M.A., Van Hove J.M., Kuznia J.N., and Olson D.T. Appl. Phys. Lett. 58 (1991) 2408
11. Khan M.A., Kuznia J.N., Olson D.T., Van Hove J.M., Blasingame M., and Reitz L.F. High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers. Appl. Phys. Lett. 60 23 (1992) 2917
12. Khan M.A., Kuznia J.N., Van Hove J.M., Pan N., and Carter J. Appl. Phys. Lett. 60 (1992) 3027
13. Khan M.A., Kuznia J.N., Olson D.T., Blasingame M., and Bhattarai A.R. Schottky barrier photodetector based on Mg-doped p-type GaN films. Appl. Phys. Lett. 63 18 (1993) 2455
14. Khan M.A., Shur M.S., Chen Q., and Kuznia J.N. Current-voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias. Electronics Letters 30 25 (1994) 2175
15. Khan M.A., Chen Q., Sun C.J., Shur M.S., Macmillan M.F., Devaty R.P., and Choyke J. Optoelectronic devices based on GaN, AlGaN, InGaN homoheterojunctions and superlattices. I. Optoelectronic Materials, Devices, and Integrated Circuits, Proc. SPIE 2397 (1995) 283
16. Khan M.A., Shur M.S., Chen Q., Kuznia J.N., and Sun C.J. Gated photodetector based on GaN/A1GaN heterostructure field effect transistor. Electronics Letters 31 5 (1995) 398-400
17. Khan M.A., Shur M.S., and Chen Q. Hall measurements and contact resistance in doped GaN/A1GaN heterostructures. Appl. Phys. Lett. 68 21 (1996) 3022-3024
18. Khan M.A., Chen Q., Yang J., Sun C.J., Lam B., Anwar M.Z., Shur M.S., Temkin H., Dermott B.T., Higgins J.A., Burm J., Schaff W., and Eastman L.F. Visible Light Emitters, Ultraviolet Detectors, and High-Frequency Transistors Based on III-N Alloys. In: Scheffler M., and Zimmermann R. (Eds). The Physics of Semiconductors. (1996), World Scientific, Singapore 3171-3178
19. Kruise P.W., McGlauchlin L.D., and McQuistan R.B. Elements of Infrared Technology. (1962), John Wiley and Sons, New York
20. Kruise P.W. In: Keyes R.J. (Ed). Optical and Infrared Detectors (1977), Springer, Berlin
21. Kung P., Zhang X., Walker D., Saxler A., Piotrowski J., Rogalski A., and Razeghi M. Kinetics of photoconductivity in n-type GaN photodetector. Appl. Phys. Lett. 67 25 (1995) 3792
22. Lee K., Shur M., Fjeldly T., and Ytterdal T. Semiconductor Device Modeling for VLSI (1993), Prentice-Hall, New Jersey
23. M.E. Levinshtein (1996). Private communication
24. 1-xN. Appl. Phys. Lett. 68 26 (1996) 3761-3762
25. Lim B.W., Gangopadhyay S., Yang J.W., Osinsky A., Chen Q., Anwar M.Z., and Khan M.A. 8x8 GaN Schottky barrier photodiode array for visible-blind imaging. Electronics Letters 33 7 (1997) 633-634
26. Mohammad S.N., Fan Z.-F., Kim W., Aktas O., Botchkarev A.E., Salvador A., and Morkoç H. Electron. Lett 32 (1996) 598
27. Morkoç H., Strite S., Gao G.B., Lin M.E., Sverdlov B., and Burns M. J. Appl. Phys. 76 (1994) 1363
28. Osinsky A., Gangopadhyay S., Lim B.W., Anwar M.Z., Khan M.A., Kuksenkov D.V., and Temkin H. Schottky barrier photodetectors based on AlGaN. Appl. Phys. Lett. 72 6 (1998) 742-744 Feb.
29. Osinsky A., Shur M.S., Gaska R., and Chen Q. Avalanche breakdown and breakdown luminescence in p-π-n GaN diodes. Electron. Lett. 34 7 (1998) 691-692 April 2
30. Pankove J.I., and Berkeyheiser J.E. J. Appl. Phys. 45 (1974) 3892
31. Pearton S.J., Vartuli C.B., Zolper J.C., Yuan C., and Stall R.A. Appl. Phys. Lett. 67 10 (1995) 1435-1437
32. Qian W., Skowronski M., de Graef M., Doverspike K., Rowland L.B., and Gaskill D.K. Appl. Phys. Lett. 66 (1995) 1252
33. Qiu C.H., Hogatt C., Melton W., Leksono M.W., and Pankove J.I. Study of defect states in GaN films by photoconductivity measurement. Appl. Phys. Lett. 66 (1995) 20 2712-2714
34. Razeghi M., and Rogalski A. Semiconductor ultraviolet detectors. J. Appl. Phys. 79 10 (1996) 7433
35. Schmitz A.C., Ping A.T., Khan M.A., Chen Q., Yang J.W., and Idesida I. Semiconductor Sci. Technol. 11 (1996) 1464
36. Shur M.S. Physics of Semiconductor Devices. (1990), Prentice-Hall, Inc, Englewood Cliffs, NJ
37. Shur M.S. Introduction to Electronic Devices (1996), John Wiley and Sons, New York
38. Shur M.S., and Khan M.A. GaN/A1GaN heterostructure devices: Photodetectors and field effect transistors. MRS Bulletin 22 2 (1997) 44-50
39. Stevens K.S., Kinniburgh M., and Beresford R. Photoconductive ultraviolet sensor using Mg-doped GaN on Si(111). Appl. Phys. Lett. 66 25 (1995) 3518
40. van der Ziel. Noise in Solid State Devices and Circuits (1986), John Wiley and Sons, New York
41. D. Walker P. Kung A. Saxler X.L. Zhang Razeghi M. H. Jurgensen GaN based semiconductors for future optoelectronics Institute of Physics Conference Series 145 1996 1133 1138
42. Walker D., Zhang X.L., Kung P., Saxler A., Javadpour S., Xu J., and Razeghi M. A1GaN ultraviolet photoconductors grown on sapphire. Appl. Phys. Lett. 68 15 (1996) 2100-2101