Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers

Optical and Quantum Electronics

Volumn 41, Issue 10, 2009, Pages 735-749

  Tilma, B W ^a   Tahvili, M S ^a   Kotani, J ^a   Notzel R ^a   Smit, M K ^a   Bente, E A J M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Gain measurement; Integrated optoelectronics; Quantum dots; Rate equations; Semiconductor optical amplifiers

Indexed keywords

ACTIVE-PASSIVE INTEGRATION; AMPLIFIER GAIN; BIOPHOTONIC APPLICATIONS; BLUE SHIFT; CARRIER DYNAMICS; CONCENTRATION-DEPENDENT; DOT SIZE; ESCAPE TIME; GAIN BANDWIDTH; GAIN SPECTRA; INAS/INP; INJECTION CURRENT DENSITY; INTEGRATED DEVICE; MEASUREMENT AND ANALYSIS; OPTICAL GAIN SPECTRA; PEAK GAIN WAVELENGTH; PEAK WAVELENGTH; QUANTUM DOT; QUANTUM DOTS; RATE EQUATIONS; RATE-EQUATION MODELS; RIDGE WAVEGUIDES; SECOND EFFECTS; SIMULATED SPECTRA; SMALL SIGNAL; STATE-FILLING; WAVELENGTH REGIONS; WETTING LAYER;

CARRIER CONCENTRATION; EXCITED STATES; GAIN MEASUREMENT; OPTICAL SWITCHES; OPTICAL WAVEGUIDES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR OPTICAL AMPLIFIERS; WAVEGUIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77956616542     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-010-9386-y     Document Type: Article

References (26)

1. Allen, C. Nì., Poole, P. J., Marshall, P., Fraser, J., Raymond, S., Fafard, S.: InAs self-assembled quantum-dot lasers grown on (100) InP. Appl. Phys. Lett. 80 (19), 3629-3631 (2002)
2. Anantathanasarn, S., Nötzel, R., van Veldhoven, P. J., van Otten, F. W. M., Barbarin, Y., Servanton, G., de Vries, T., Smalbrugge, B., Geluk, E. J., Eijkemans, T. J., Bente, E. A. J. M., Oei, Y. S., Smit, M. K., Wolter, J. H.: Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy. Appl. Phys. Lett. 89 (7), 073115 (2006)
3. Asryan, L. V., Grundmann, M., Ledentsov, N. N., Stier, O., Suris, R. A., Bimberg, D.: Effect of exited-state transitions on the threshold characteristics of a quantum dot laser. IEEE J. Quantum Electron. 37 (3), 418-425 (2001)
4. Barbarin, Y., Bente, E. A. J. M., Servanton, G., Mussard, L., Oei, Y. S., Nötzel, R., Smit, M. K.: Gain measurements of Fabry-Perot InP/InGaAsP lasers using an ultrahigh-resolution spectrometer. Appl. Optics. 45 (35), 9007-9012 (2006)
5. Bente, E. A. J. M., Smit, M. K.: Ultrafast InP optical integrated circuits. SPIE Proc. 6124 Optoelectronic Integrated Circuits VIII, Photonics West 2006, San Jose (2006)
6. Bogaart, E. W., Nötzel, R., Gong, Q., Haverkort, J. E. M., Wolter, J. H.: Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 μm wavelength region. Appl. Phys. Lett. 86 (17), 173109 (2005)
7. Borri, P., Langbein, W., Hvam, J. M., Heinrichsdorff, f., Mao, M. H., Bimberg, D.: Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers. IEEE Phot. Technol. Lett. 12 (6), 594-596 (2000)
8. Caroff, P., Paranthoen, C., Platz, C., Dehaese, O., Folliot, H., Bertru, N., Labbé, C., Piron, R., Homeyer, E., Le Corre, A., Loualiche, S.: High-gain and low threshold InAs quantum-dot lasers on InP. Appl. Phys. Lett. 87 (7), 243107 (2005)
9. Fercher, A. F., Drexler, W., Hitzenberger, C. K., Lasser, T.: Optical coherence tomography-principles and applications. Rep. Prog. Phys. 66, 239-303 (2003)
10. Gioannini, M., Montrosset, I.: Numerical analysis of the frequency chirp in quantum-dot semiconductor lasers. IEEE J. Quantum Electron. 43 (10), 941-949 (2007)
11. Gong, Q., Nötzel, R., Velthoven, P. J., van Eijkemans, T. J., Wolter, J. H.: Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy. Appl. Phys. Lett. 84 (2), 275-277 (2004)
12. Grillot, F., Veselinov, K., Gioannini, M., Montrosset, I., Even, J., Piron, R., Homeyer, E., Loualiche, S.: Spectral analysis of 1.55-μm InAs-InP (113) B quantum-dot lasers based on a multi-population rate equations model. IEEE J. Quantum Electron. 45 (7), 872-878 (2009)
13. Hakki, B. W., Paoli, T. L.: Gain spectra in GaAs double-heterostructure injection lasers. J. Appl. Phys. 46 (3), 1299-1306 (1975)
14. Holm, M., Pistol, M. E, Pryor, C.: Calculations of the electronic structure of strained InAs quantum dots in InP. J. Appl. Phys. 92 (2), 932-936 (2002)
15. 0.85As quantum well. IEEE Electron. Lett. 35 (14), 1163-1165 (1999)
16. Miska, P., Even, J., Marie, X., Dehaese, O.: Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots. Appl. Phys. Lett. 94, 061919 (2009)
17. Nötzel, R., Anantathanasarn, S., van Veldhoven, R. P. J., van Otten, F. W. M., Eijkemans, T. J., Trampert, A., Satpati, B., Barbarin, Y., Bente, E. A. J. M., Oei, Y. S., de Vries, T., Geluk, E. J., Smalbrugge, B., Smit, M. K., Wolter, J. H.: Self assembled InAs/InP quantum dots for telecom applications in the 1.55 μm wavelength range: wavelength tuning, stacking, polarization control, and lasing. Jpn. J. Appl. Phys. 45 (8B), 6544-6549 (2006)
18. Oster, A., Erbert, G., Wenzel, H.: Gain spectra measurements by a variable strip length method with current injection. IEEE Electron. Lett. 33 (10), 864-866 (1997)
19. Rosenbrock, H. H.: Some general implicit processes for the numerical solution of differential equations. Computer. J. 5 (4), 329-330 (1963)
20. Rossetti, M., Bardella, P., Montrosset, I.: Numerical investigation of power tunability in two-section QD superluminescent diodes. Opt. Quant. Electron. 40 (14-15), 1129-1134 (2008)
21. Sugawara, M., Mukai, K., Nakata, Y.: Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics. Appl. Phys. Lett. 74 (11), 1561-1563 (1999)
22. 1-xAs/GaAs quantum dot lasers. Phys. Rev. B 61 (11), 7595-7603 (2000)
23. Thomson, J. D., Summers, H. D., Hulyer, P. M., Blood, P.: Determination of single-pass optical gain and internal loss using a multisection device. Appl. Phys. Lett. 75 (17), 2527-2529 (1999)
24. Wang, H., Yuan, J., van Veldhoven, P. J., de Vries, T., Smalbrugge, B., Geluk, E. J., Bente, E. A. J. M., Oei, Y. S., Smit, M. K., Anantathanasarn, S., Nötzel, R.: Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 μm. IEEE Electron. Lett. 44 (8), 522-523 (2008)
25. Werle, P.: A review of recent advances in semiconductor laser based gas monitors. Spectrochimica Acta Part A 54 (2), 197-236 (1998)
26. Xin, Y. C., Martinez, A., Saiz, T., Moscho, A. J., Li, Y., Nilsen, T. A., Gray, A. L., Lester, L. F.: 1.3-μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth. IEEE Phot. Technol. Lett. 19 (7), 501-503 (2007)