Gain spectra measurements by a variable stripe length method with current injection

Electronics Letters

Volumn 33, Issue 10, 1997, Pages 864-866

  Oster, A ^a   Erbert, G ^a   Wenzel, H ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Semiconductor junction lasers; Spectral analysis

Indexed keywords

CURRENT DENSITY; LIGHT EMISSION; LIGHT POLARIZATION; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

AMPLIFIED SPONTANEOUS EMISSION; GAIN SPECTRA MEASUREMENT; LASER STRUCTURES; SEMICONDUCTOR JUNCTION LASERS;

SEMICONDUCTOR LASERS;

EID: 0031559294     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970605     Document Type: Article

References (6)

1. HAKKI, B.W., and PAOLI, TL.: 'Gain spectra in GaAs double-heterostructure injection lasers', J. Appl. Phys., 1975, 46, pp. 1299-1306
2. BOSSERT, D.J., and GALLANT, D.: 'Improved method for gain/index measurements of semiconductor lasers', Electron. Lett., 1996, 32, pp. 338-339
3. SHAKLEE, K.L., and LEHENY, R.F.: 'Direct determination of optical gain in semiconductor crystals', Appl. Phys. Lett., 1971, 18, pp. 475-477
4. BOSSERT, D.J., and GALLANT, D.: 'Gain, refractive index, and α-parameter in InGaAs-GaAs SQW broad-area lasers', IEEE Photonics Technol. Lett., 1996, 8, pp. 322-324
5. McDOUGALL, S.D., and IRONSIDE, CN.: 'Measurements of reverse and forward bias absorption and gain spectra in semiconductor laser material', Electron. Lett., 1995, 31, pp. 2179-2180
6. AVRUTIN, E.A., CHEBUNIN, I.E., ELIASHEVITCH, I.A., GUREVICH, S.A., and SHTENGEL, G.E.: 'TE and TM optical gains in AlGaAs/GaAs single-quantum-well lasers', Semicond. Sci. Technol., 1993, 8, pp. 80-87