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Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

Ultrafast carrier capture at room temperature in InAsInP quantum dots emitting in the 1.55 μm wavelength region

(5) Bogaart, E W a Notzel R a Gong, Q a Haverkort, J E M a Wolter, J H a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; LIGHT ABSORPTION; LIGHT AMPLIFIERS; LIGHT TRANSMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICES;

DIFFERENTIAL REFLECTIVITY SPECTRUM; EXCITATION DENSITY; PROBE ENERGY; THERMAL CARRIER ACTIVATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20844456392 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1915527 Document Type: Article

Times cited : (26)

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