1.3-μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth

IEEE Photonics Technology Letters

Volumn 19, Issue 7, 2007, Pages 501-503

  Xin, Y C ^a   Martinez, A ^a,c   Saiz, T ^a   Moscho, A J ^a   Li, Y ^a   Nilsen, T A ^a,d   Gray, A L ^b   Lester, L F ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b Zia Laser Incorporated   (United States)

^c UNIV PARIS SUD   (France)

^d NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

Quantum dots (QDs); Superluminescent diodes (SLDs)

Indexed keywords

BANDWIDTH; OPTICAL SIGNAL PROCESSING; SEMICONDUCTOR QUANTUM DOTS; WAVEGUIDES;

MULTISECTION CONFIGURATION; SUPERLUMINESCENT DIODES (SLDS); ULTRAWIDE BANDWIDTH;

SEMICONDUCTOR DIODES;

EID: 34047196852     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.893567     Document Type: Article

References (15)

1. D. S. Adler, T. H. Ko, A. K. Konorev, D. S. Mamedov, V. V. Prokhorov, J. J. Fujimoto, and S. D. Yakubovich, "Broadband light source based on quantum-well superluminescent diodes for high-resolution optical coherence tomography," Quantum Electron., vol. 34, pp. 915-918, 2004.
2. T. K. Ong, M. Yin, Z. Yu, Y. C. Chan, and Y. L. Lam, "High performance quantum well intermixed superluminescent diodes," Meas. Sci. Technol., vol. 15, pp. 1591-1595, 2004.
3. G. T. Du, C. D. Xu, Y. Liu, Y. S. Zhao, and H. S. Wang, "High-power integrated superluminescent light source," IEEE J. Quantum Electron., vol. 39, no. 1, pp. 149-153, Jan. 2003.
4. A. T. Semenov, V. R. Shidlovski, D. A. Jackson, R. Willsch, and W. Ecke, "Spectral control multisection AlGaAs SQW superluminescent diodes at 800 nm," Electron. Lett., vol. 32, pp. 255-256, 1996.
5. H. S. Djie, C. E. Dimas, and B. S. Ooi, "Semiconductor quantum-dot based wideband emitter for optical sensors," IEEE Sensor, pp. 932-934, Oct. 30-Nov. 3, 2005.
6. C. F. Lin and B. L. Lee, "Extremely broadband AlGaAs/GaAs superluminescent diodes," Appl. Phys. Lett., vol. 71, pp. 1598-1600, 1997.
7. H. S. Gingrich, D. R. Chumney, S. Z. Sun, S. D. Hersee, L. F. Lester, and S. R. J. Brueck, "Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells," IEEE Photon. Technol. Lett., vol. 9, no. 2, pp. 155-157, Feb. 1997.
8. Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, "High-performance quantum-dot superluminescent diodes," IEEE Photon. Technol. Lett., vol. 16, no. 1, pp. 27-29, Jan. 2004.
9. D. C. Heo, J. D. Song, W. J. Choi, J. I. Lee, J. C. Jung, and I. K. Han, "High power broadband InGaAs/GaAs quantum dot superluminescent diodes," Electron. Lett., vol. 39, pp. 863-865, 2003.
10. L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, "Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers," Electron. Lett., vol. 41, pp. 41-43, 2005.
11. S. K. Ray, K. M. Groom, H. Y. Liu, M. Hopkinson, and R. A Hogg, "Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells," Jpn. J. Appl. Phys. Part 1-Regular Papers Brief Commun. and Rev. Papers, vol. 45, pp. 2542-2545, 2006.
12. S. K. Ray, K. M. Groom, M. D. Beattie, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells," IEEE Photon. Technol. Lett., vol. 18, no. 1, pp. 58-60, Jan. 1, 2006.
13. A. Stintz, G. T. Liu, H. Li, L. F. Lester, and K. J. Malloy, "Lowthreshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure," IEEE Photon. Technol. Lett., vol. 12, no. 6, pp. 591-593, Jun. 2000.
14. Y. C. Xin, Y. Li, A. Martinez, T. J. Rotter, H. Su, L. Zhang, A. L. Gray, S. Luong, K. Sun, Z. Zou, J. Zilko, P. M. Varangis, and L. F. Lester, "Optical gain and absorption of quantum dots measured using an alternative segmented contact method," IEEE J. Quantum Electron., vol. 42, no. 7, pp. 725-732, Jul. 2006.
15. J. T. Verdeyen, Laser Electronics. Englewood Cliffs, NJ: Prentice-Hall, 1993.