Deep-level transient spectroscopy and photoluminescence studies of formation and depth profiles of copper centers in silicon crystals diffused with dilute copper

Japanese Journal of Applied Physics

Volumn 49, Issue 7 PART 1, 2010, Pages 0713021-0713028

  Nakamura, Minoru ^a   Murakami, Susumu ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER CENTERS; CU ATOMS; CU SPECIES; DEPTH PROFILE; DISSOCIATION PRODUCTS; DLTS; FORMATION KINETICS; INTERSTITIAL CU; LOW CONCENTRATIONS; MAIN COMPONENT; OUT-DIFFUSION; P-TYPE SI; SAMPLE SURFACE; SILICON CRYSTAL;

CRYSTALS; PHOTOLUMINESCENCE;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 77956499398     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.071302     Document Type: Article

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