Electrical properties of nanocrystalline CdSe thin films prepared by thermal vacuum evaporation

Semiconductor Science and Technology

Volumn 23, Issue 9, 2008, Pages

  Aneva, Z ^a   Nesheva, D ^a   Main, C ^b   Reynolds, S ^b   Fitzgerald, A G ^b   Vateva, E ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b UNIVERSITY OF DUNDEE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL GROWTH; DEFECT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FILM PREPARATION; GRAIN BOUNDARIES; HETEROJUNCTIONS; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; NONMETALS; OXYGEN; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; PHOTOREFRACTIVE MATERIALS; SCANNING PROBE MICROSCOPY; THERMAL EVAPORATION; THICK FILMS; THIN FILMS; VACUUM EVAPORATION;

BAND BENDING; CONDUCTION BANDS; CONDUCTIVITY DATA; CONDUCTIVITY MEASUREMENTS; DARK CONDUCTIVITY; DARK CURRENTS; DEFECT STATES; DEPOSITION CONDITIONS; ELECTRICAL PROPERTIES; FILM-THICKNESS; INTERFACE DEFECT DENSITY; LAYER THICKNESSES; LEVEL SHIFTING; NANO-CRYSTALLINE; RECOMBINATION CENTRES; SIMULTANEOUS FITTING; STEP-BY-STEP; TRAP PARAMETERS; VAPOUR DEPOSITION;

IMAGING TECHNIQUES;

EID: 51849164026     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/9/095002     Document Type: Article

References (41)

1. Sberveglieri G 1992 Gas Sensors (Dordrecht, Germany: Kluwer)
2. Miremadi B K, Colbow K and Harima Y 1997 Rev. Sci. Instrum. 68 3898
3. Filonovich S A, Rakovich Y P, Rolo A G, Artemyev M V, Hungerford G, Vasilevskiy M I, Gomes M J M and Ferreira J F M 2000 J. Optoelectron. Adv. Mater. 2 623
4. Patel M, Pu C-J J and Sharpe L R 1995 Langmuir 11 2003
5. Chen Ch-Y, Cheng Ch-T, Lai Ch-W, Wu P-W, Wu K-Ch, Chou Pi-Tai, Chou Yi-H and Chiu H-T 2006 Chem. Commun. 2006 263
6. Kim Y Sh et al 2005 Appl. Phys. Lett. 86 213105
7. Imb Y, Vasquezc R P, Leec Ch, Myungd N, Penner R and Yun M 2006 J. Phys.: Conf. Ser. 38 61
8. Tsiulyanu D, Stratan I, Tsiulyanu A, Liess H-D and Eisele I 2007 Sensors Actuators 121 406 and references therein
9. Martins R, Fortunato E, Nunes P, Ferreira I, Marques A, Bender M, Katsarakis N, Cimalla V and Kiriakidis G 2004 J. Appl. Phys. 96 1398
10. Makhija K K, Ray A, Patel R M, Trivedi U B and Kapse H N 2005 Bull. Mater. Sci. 28 9
11. Smyntyna V A, Gersutenko V, Sashulis S, Mattogno G and Reghini S 1994 Sensors Actuators B 18-19 464
12. Shallcross F V 1963 RCA Rev. 24 208
13. Schottmiller J C, Francis R W and Wood C 1975 US Patent 3887368
14. Smyntyna V A and Grinevich V S 2001 Proc. Int. Semiconductor Conf. (CAS 2001) vol 2 p 407
15. Trojanek F et al 2006 J. Cryst. Growth 292 78
16. Rivera-Mrquez, Rubín-Falfn M, Lozada-Morales R, Portillo-Moreno O, Zelaya-Angel O, Luyo-Alvarado J, Meléndez-Lira M and Bãos L 2001 Phys. Status Solidi a 188 1059
17. Pejova B, Tanusevski A and Grozdanov I 2003 J. Solid State Chem. 174 276
18. Hodes G, Grunbaum E, Feldman Y, Bastide S and Lévy-Clément C 2005 J. Electrochem. Soc. 152 G917
19. Nesheva D, Aneva Z, Reynolds S, Main C and Fizgerald A G 2006 J. Optoelectron. Adv. Mater. 8 2120
20. Reynolds S, Aneva Z, Levi Z, Nesheva D, Smirnov V and Main C 2007 J. Optoelectron. Adv. Mater. 9 209
21. Nesheva D, Arsova D and Ionov R 1993 J. Mater. Sci. 28 2183
22. Ionov R and Nesheva D 1992 Thin Solid Films 213 230
23. Nesheva D, Levi Z, Aneva Z, Nikolova V and Hofmeister H 2000 J. Phys.: Condens. Matter. 12 751
24. Chopra K L 1972 Electrical Phenomena in Thin Films ed T D Shermergor (Moscow: Mir) p 11
25. Weber E H 1970 Phys. Status Solidi a 1 665
26. Weber E H 1968 Phys. Status Solidi a 28 649
27. Bube R H 1992 Photoelectronic Properties of Semiconductors (Cambridge, UK: Cambridge University Press)
28. Kazmerski L L Plicrystallin and Amorphous Thin Films and Devices ed L L Kazmerski (New York: Academic) Chapter 3
29. Mott N F and Davis E A 1982 Electron Processes in Non-Crystalline Materials (Moscow: Mir)
30. Aneva Z, Nesheva D, Main C and Reynolds S 2007 J. Optoelectron. Adv. Mater. 9 205
31. Landolt-Bornstein 1982 Numerical Data and Functional Relationships in Science and Technology (New Series) vol 17b ed K-H Hellewege (Berlin: Springer)
32. Aneva Z, Nesheva D and Vateva E 2006 J. Appl. Phys. 100 53704
33. Cowell T T and Woods J 1967 Br. J. Appl. Phys. 18 1045
34. Zhu Meifang and Fritzsche H 1986 Phil. Mag. B 53 41
35. Karoutsos V, Pomoni K, Vomvas A and Sotiropoulos J 1997 Phys. Status Solidi b 199 127
36. Nesheva D, Reynolds S, Main C, Aneva Z and Levi Z 2005 Phys. Status Solidi a 202 1081
37. Srivastava R K, Lal P, Dwivedi R and Srivastatva S K 1994 Sensors Actuators B 21 213
38. Timmer B, Olthuis W and van den Berg A 2005 Sensors Actuators B 107 666
39. Kovalenko O E and Guzovskii V G 2005 Tech. Phys. Lett. 31 749
40. Winder E J, Moore D E, Neu D R, Ellis A B, Geitz J F and Kuech T F 1995 J. Cryst. Growth 148 63
41. Simurda M, Nemec P, Preclikova J, Trojanek F, Miyoshi T, Kazatani K and Maly P 2006 Thin Solid Films 503 64