Hetero-epitaxial growth of the cubic single crystalline HfO2 film as high k materials by pulsed laser ablation

Journal of Crystal Growth

Volumn 312, Issue 20, 2010, Pages 2928-2930

  Zhang, Xinqiang ^a   Tu, Hailing ^a   Wang, Xiaona ^a   Xiong, Yuhua ^a   Yang, Mengmeng ^a   Wang, Lei ^a   Du, Jun ^a  

^a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

A1. Crystal structure; A1. Reflection high energy electron diffraction; A3. Laser epitaxy; B2. Dielectric materials

Indexed keywords

A1. CRYSTAL STRUCTURE; A1. REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; A3. LASER EPITAXY; B2. DIELECTRIC MATERIALS; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; DIELECTRIC CONSTANTS; GATE INSULATOR; HETEROEPITAXIAL GROWTH; HIGH-K MATERIALS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; INTERFACE LAYER; INTERFACIAL DEFECT; PULSE LASER ABLATION; PULSED LASER ABLATION; SI SUBSTRATES; SINGLE-CRYSTALLINE;

CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; ELECTRONS; EPITAXIAL GROWTH; HAFNIUM COMPOUNDS; HIGH ENERGY PHYSICS; LASER ABLATION; PULSED LASER APPLICATIONS; PULSED LASERS; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC MATERIALS;

EID: 77956402082     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.07.015     Document Type: Article

References (14)

1. H.D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. Efavi, M. Schmidt, T. Wahlbrink, M.C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.J. Osten, A. Fissel, Solid State Electron. 50 (6) (2006) 979.
2. H.M. Christen, G.E. Jellison, Jr., I. Ohkubo, S. Huang, M.E. Reeves, E.Cicerrella, J.L. Freeouf, Y. Jia, D.G. Schlom, Appl. Phys. Lett. 88 (2006) 262906.
3. A.Fissel, M.Czernohorsky, H.J. Osten, Superlatt. Microstruct. 40 (2006) 551.
4. M. Wu, Y.I. Alivov, H. Morko, J. Mater. Sci-Mater. EI. 19 (80) (2008) 915.
5. Z.K.Yang, W.C.Lee, Y.J. Lee, P. Chang, M. L. Huang, M. Hong, Appl. Phys. Lett. 90 (2007) 152908.
6. K. Karakaya, A. Zinine, J.G.M. van Berkum, M.A. Verheijen, Z.M. Rittersma, G. Rijnders, D.H.A. Blanka, J. Electrochem. Soc. 153 (10) (2006) 233.
7. F. Wei, H. Tu, and J. Du, J. Phys. D 42 (2009) 185301.
8. W.F. Xiang, H.B. Lu, Z.H. Chen, X.B. Lu, M.He, H.Tian, Y.L. Zhou, C.R.Li, X.L. Ma, J. Cryst. Growth 271 (2004) 165.
9. F. Wei, H.L. Tu, Y. Wang, S. Yue, J. Du, Appl. Phys. Lett. 92 (2008) 012901.
10. X.Q. Zhang, H.L. Tu, F. Wei, L. Wang, J. Du, J. Cryst. Growth 312 (2009) 41.
11. J.Y.Tewg, Y. Kuo, J. Lu, J. Electrochem. Soc. 152 (2005) G643
12. C.B. Samantaray, Z. Chen, Appl. Phys. Lett 89 (2006) 162903.
13. T. Tanimura, H. Kamada, S. Toyoda, H. Kumigashira, M. Oshima, G.L. Liu, Z.Liu, K. Ikeda, Appl. Phys. Lett 94 (2009) 082903.
14. X. Zhao, D. Vanderbilt, Phys. Rev. B 65 (2002) 233106.