Raman scattering on intrinsic surface electron accumulation of InN nanowires

Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

  Jeganathan, K ^a   Purushothaman, V ^a   Debnath, R K ^b   Calarco, R ^c   Luth, H ^c  

^a BHARATHIDASAN UNIVERSITY   (India)

^b UNIVERSITY OF TORONTO   (Canada)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING GEOMETRY; FIELD STRENGTHS; INN NANOWIRES; INTRINSIC PROPERTY; INTRINSIC SURFACES; LO PHONONS; LONGITUDINAL OPTICAL PHONONS; SURFACE ACCUMULATION; SURFACE ELECTRON; VERTICALLY ALIGNED;

CARRIER CONCENTRATION; NANOWIRES; RAMAN SCATTERING;

PHONONS;

EID: 77956356337     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3483758     Document Type: Article

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