SCOPUS 정보 검색 플랫폼

Volumn 518, Issue 23, 2010, Pages 6870-6875

Annealing and partial pressure ratio effects on ZnO films grown by metal-organic chemical vapor deposition using tert-butanol as oxidant

(5) Sayari, A a Marzouki, A b Lusson, A b Oueslati, M a Sallet, V b

a Equipe de Spectroscopie Raman (Tunisia)

b LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT (France)

Author keywords

Annealing; Metal organic chemical vapor deposition; Photoluminescence; Raman scattering; Tert butanol; Zinc oxide

Indexed keywords

ANNEALED FILMS; ANNEALING TIME; AS-DEPOSITED FILMS; AS-GROWN; AS-GROWN FILMS; BROAD BANDS; DONOR-BOUND EXCITON; FREE-EXCITON EMISSIONS; LOW TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPIES; LUMINESCENT EFFICIENCY; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; MICRO RAMAN MEASUREMENTS; MICRO-RAMAN SCATTERING; MODE FREQUENCIES; NON-RADIATIVE RECOMBINATIONS; OXYGEN AMBIENT; PARTIAL PRESSURE RATIO; PL SPECTRA; RAMAN SPECTRA; RICH CONDITIONS; SAPPHIRE SUBSTRATES; TERT BUTANOL; THERMAL-ANNEALING; VIBRATIONAL PROPERTIES; ZINC PRECURSOR; ZNO FILMS;

ALCOHOLS; ANNEALING; EXCITONS; INDUSTRIAL CHEMICALS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; OPTICAL PROPERTIES; ORGANIC CHEMICALS; OXYGEN; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCATTERING; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

METAL ANALYSIS;

EID: 77956228088 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.07.031 Document Type: Article

Times cited : (8)

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