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Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 268-272

Si surface band-gap shift on top of buried Ge quantum dots

(3) Klemenc, M a Meyer, T a Von Kanel H a

a ETH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MICROSCOPY; ELECTRONIC STRUCTURE; ENERGY GAP; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM); SCANNING TUNNELING SPECTROSCOPY (STS);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034301192 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(00)00404-9 Document Type: Article

Times cited : (4)

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