Size analysis of nanoscale order in amorphous materials by variable-resolution fluctuation electron microscopy

Ultramicroscopy

Volumn 110, Issue 10, 2010, Pages 1273-1278

  Bogle, Stephanie N ^a   Nittala, Lakshmi N ^a   Twesten, Ray D ^b   Voyles, Paul M ^c   Abelson, John R ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

Amorphous silicon; Medium range order; Nanoprobe

Indexed keywords

AMORPHOUS SILICON THIN FILMS; DECAY LENGTH; DEPOSITION CONDITIONS; EXPERIMENTAL DATA; FLUCTUATION ELECTRON MICROSCOPIES; HIGH QUALITY; MATRIX; MEDIUM RANGE ORDER; MODEL SIMULATION; NANO SCALE; POSITIONAL CORRELATION; RANDOM NETWORK; SIMPLIFYING ASSUMPTIONS; SIZE ANALYSIS; STRUCTURAL ORDERS; VARIABLE RESOLUTION;

AMORPHOUS FILMS; COMPUTER SIMULATION; DEPOSITION; ELECTRON BEAMS; NANOPROBES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS;

AMORPHOUS SILICON;

NANOCRYSTAL; SILANE; SILICON;

ARTICLE; CHEMICAL REACTION; CHEMICAL VAPOR DEPOSITION; CONTROLLED STUDY; CRYSTALLIZATION; DIFFRACTION; ELECTRON BEAM; FILM; FLUCTUATION ELECTRON MICROSCOPY; IMAGE QUALITY; NANOANALYSIS; NANOPROBE; PARTICLE SIZE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 77956190438     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2010.05.001     Document Type: Article

References (28)

1. Voyles P.M., Gibson J.M., Treacy M.M.J. Journal of Electron Microscopy 2000, 49:259-266.
2. Treacy M.M.J., Gibson J.M. Acta Crystallographica Section A 1996, 52:212-220.
3. Biswas P., Tafen D.N., Drabold D.A. Physical Review B 2005, 71.
4. Nakhmanson S.M., Voyles P.M., Mousseau N., Barkema G.T., Drabold D.A. Physical Review B 2001, 63:235207.
5. Bogle S.N., Voyles P.M., Khare S.V., Abelson J.R. Journal of Physics-Condensed Matter 2007, 19.
6. Stratton W.G., Voyles P.M. Ultramicroscopy 2008, 108:727-736.
7. Stratton W.G., Voyles P.M. Journal of Physics-Condensed Matter 2007, 19.
8. Voyles P.M., Muller D.A. Ultramicroscopy 2002, 93:147-159.
9. Gibson J.M., Treacy M.M.J., Voyles P.M. Ultramicroscopy 2000, 83:169-178.
10. Myers A., Doyle J., Feng G., Maley N., Ruzic D., Abelson J. Journal of Non-Crystalline Solids 1991, 137:783-786.
11. Roca i Cabarrocas P., Chaabane N., Kharchenko A.V., Tchakarov S. Plasma Physics and Controlled Fusion 2004, 46:B235-B243.
12. Center for Microanalysis of Materials, University of Illinois at Urbana-Champaign.
13. Williams D.B., Carter C.B. Transmission Electron Microscopy: A Textbook for Materials Science 1996, Plenum Press, New York.
14. S.N. Bogle, J.R. Abelson, in preparation.
15. S.N. Bogle, Thesis, University of Illinois at Urbana-Champaign, 2009.
16. Voyles P.M., Bogle S.N., Abelson J.R. STEM: Imaging and Analysis 2009, Springer. P. Nellist, S.J. Pennycook (Eds.).
17. Pinarbasi M., Maley N., Myers A., Abelson J.R. Thin Solid Films 1989, 171:217-233.
18. Treacy M.M.J., Gibson J.M., Keblinski P.J. Journal of Non-Crystalline Solids 1998, 231:99-110.
19. Kitabatake M., Fons P., Greene J.E. Journal of Vacuum Science and Technology A 1991, 9:91-97.
20. Gerbi J.E., Voyles P.M., Treacy M.M.J., Gibson J.M., Abelson J.R. Applied Physics Letters 2003, 82:3665-3667.
21. Leroy O., Gousset G., Alves L.L., Perrin J., Jolly J. Plasma Sources Science and Technology 1998, 7:348-358.
22. Longeaud C., Kleider J.P., Roca i Cabarrocas P., Hamma S., Meaudre R., Meaudre M. Journal of Non-Crystalline Solids 1998, 227:96-99.
23. A. Fontcuberta i Morral, Thesis, Ecole Polytechnique, 2001.
24. Meaudre R., Butte R., Vignoli S., Meaudre M., Saviot L., Marty O., Roca i Cabarrocas P. European Physical Journal-Applied Physics 2003, 22:171-178.
25. Nguyen-Tran T., Suendo V., Roca i Cabarrocas P., Nittala L.N., Bogle S.N., Abelson J.R. Journal of Applied Physics 2006, 100.
26. P.M. Voyles, M.M.J. Treacy, J.M. Gibson, in: H. Wadley, G. Gilmer, W. Barker (Eds.), Materials Research Society Symposium Proceedings, vol. 616, 2000.
27. Stratton W.G., Hamann J., Perepezko J.H., Voyles P.M., Khare S.V., Mao X. Appl. Phys. Lett. 2005, 86:141910.
28. Lee B.S., Burr G.W., Shelby R.M., Raoux S., Rettner C.T., Bogle S.N., Darmawikarta K., Bishop S.G., Abelson J.R. Science 2009, 326:980-984.