Properties of a new a-Si:H-like material: Hydrogenated polymorphous silicon

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 96-99

  Longeaud, C ^a   Kleider, J P ^a   Roca I Cabarrocas, P ^b   Hamma, S ^b   Meaudre, R ^c   Meaudre, M ^c  

^a UNIV PARIS SUD   (France)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c UNIVERSITÉ LYON 1   (France)

Author keywords

Electronic transport properties; Hydrogenated polymorphous silicon; Radio frequency powered plasma enhanced chemical vapor deposition system (RF PECVD)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; HYDROGENATION; PHOTOCONDUCTIVITY; PLASMA APPLICATIONS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); POLYMORPHOUS SILICON;

AMORPHOUS SILICON;

EID: 0032065210     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00217-8     Document Type: Article

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