Fluctuation microscopy in the STEM

Ultramicroscopy

Volumn 93, Issue 2, 2002, Pages 147-159

  Voyles, P M ^a   Muller, D A ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MICROSCOPY; GERMANIUM; SAMPLING; SCATTERING; TRANSMISSION ELECTRON MICROSCOPY;

NANODIFFRACTION;

SILICON;

GERMANIUM; NANOPARTICLE; SILICON;

ANALYTIC METHOD; ARTICLE; DIFFRACTION; IMAGE QUALITY; INTERMETHOD COMPARISON; OPTICAL RESOLUTION; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0036837581     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(02)00155-9     Document Type: Article

References (32)

1. Treacy M.M.J., Gibson J.M. Acta Cryst. A. 52:1996;212.
2. Laaziri K., Kycia S., Roorda S., Chicoine M., Robertson J.L., Wang J., Moss S.C. Phys. Rev. Lett. 82:1999;3460;
3. Laaziri K., Kycia S., Roorda S., Chicoine M., Robertson J.L., Wang J., Moss S.C. Phys. Rev. B. 60:1999;13520.
4. Sokolov A.P., Shebanin A.P. Sov. Phys. Semicond. 24:1990;720.
5. Morell G., Katiyar R.S., Weisz S.Z., Jia J., Shinar J., Balberg I. J. Appl. Phys. 78:1995;5120.
6. Mobilio S., Menghini C. J. Non-Cryst. Solids. 232-234:1998;25.
7. Stebbins J.F., Xu Zhi Nature. 390:1997;60.
8. Zhang P., Dunlap C., Florian P., Grandinetti R.J., Farnan I., Stebbins J.F. J. Non-Cryst. Solids. 204:1996;294.
9. Di Fabrizio E., Romanato F., Gentili M., Cabrini S., Kaulich B., Susini J., Barrett R. Nature. 401:1999;895.
10. Yun W., Lai B., Cai Z., Masser J., Legnini D., Gluskin E., Chen Z., Krasnoperova A.A., Vladimirsky Y., Cerrina F., Di Fabrizio E., Gentili M. Rev. Sci. Instrum. 70:1999;2238.
11. Gibson J.M., Treacy M.M.J. Phys. Rev. Lett. 78:1997;1074.
12. Gibson J.M., Treacy M.M.J., Keblinski P. J. Non-Cryst. Solids. 231:1998;99.
13. Voyles P.M., Gerbi J.E., Treacy M.M.J., Gibson J.M., Abelson J.R. Phys. Rev. Lett. 86:2001;5514.
14. Gibson J.M., Treacy M.M.J., Voyles P.M. Ultramicroscopy. 83:2000;169.
15. Fan G.Y., Cowley J.M. Ultramicroscopy. 17:1985;345.
16. Fan G.Y., Cowley J.M. Ultramicroscopy. 24:1988;49.
17. Howie A., McGill C.A., Rodenburg J.M. J. Physique Colloq. 46:1985;C9.
18. J.M. Rodenburg, I.A. Rauf, A cross-correlation measure of order in 'amorphous' indium oxide, in: P.J. Goodhew, H.Y. Elder (Eds.), EMAG-MICRO 89: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group and Royal Microscopical Society Conference London, Institute of Physics Conference Series No. 98, IOP Bristol 1989, pp. 119-122.
19. Rodenburg J.M. Ultramicroscopy. 25:1988;329.
20. Rodenburg J.M. Inst. Phys. Conf. Ser. 161:1999;145.
21. Treacy M.M.J., Gibson J.M. Ultramicroscopy. 52:1993;31.
22. P.M. Voyles, Fluctuation microscopy of medium-range order in amorphous silicon, Ph.D. Dissertation, University of Illinois, Urbana-Champaign, 2001.
23. Colliex C., Mory C. Chapman J.N., Craven A.J. Quantitative Electron Microscopy, Scottish Universities Summer School in Physics. 1984;149 Glasgow, Scotland.
24. Rose H. Optik. 39:1974;416.
25. E.J. Kirkland, Advanced Computing in Electron Microscopy, Plenum Press, New York, 1998, pp. 33.
26. McBride W.E., Cockayne D.J.H., Goringe C.M. Ultramicroscopy. 76:1999;115.
27. Xidong Chen, J.M. Gibson, J. Sullivan, T. Friedmann, P.M. Voyles, Fluctuation microscopy studies of medium-range order structures in amorphous tetrahedral semiconductors, in: P.M. Fauchet, J.M. Buriak, L.T. Canham, N. Koshida, B.E. White Jr. (Eds.), Nano- and Microcrystalline Semiconductor Materials and Structures, Material Research Society Symposium Proceedings 638 (2001) F14.40.01-F14.40.5.
28. Cowley J.M. J. Electron Microsc. 50:2001;147.
29. P.M. Voyles, M.M.J. Treacy, J.M. Gibson, H-C. Jin, J.R. Abelson, Experimental methods and data analysis for fluctuation microscopy, in: J. Bentley, U. Dahmen, C. Allen, I. Petrov (Eds.), Advances in Materials Problem Solving with the Electron Microscope, Materials Research Society Symposium Proceedings 589 (2001) 155-160.
30. D.A. Muller, unpublished.
31. D.A. Muller, Gate dielectric metrology using advanced TEM measurements, in: D.G. Seiler, A.C. Diebold, T.J. Shaffner, R. McDonald, W.M. Bullis, P.J. Smith, E.M. Secula (Eds.), Characterization and Metrology for ULSI Technology: 2000 International Conference Gaithersburg, American Institute of Physics, AIP New York 2001, pp. 500-505.
32. J.R. Taylor, An Introduction to Error Analysis: The Study of Uncertainties in Physical Measurements, University Science Books, Mill Valley, CA, 1982, pp. 127-128.