A Fast four-point sense methodology for extraction of circuit-relevant degradation parameters

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 912-914

  Kerber, Andreas ^a   Cartier, Eduard ^b  

^a IBM MICROELECTRONICS   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Bias temperature Instability (BTI); high dielectrics; metal gate; negative BTI (NBTI); positive BTI (PBTI)

Indexed keywords

BIAS TEMPERATURE INSTABILITY; DEGRADATION PARAMETER; FAST MEASUREMENT; FOUR-POINT; MEASUREMENT DELAYS; METAL GATE; NEGATIVE BTI (NBTI); PARAMETER CORRELATION; POSITIVE BIAS TEMPERATURE INSTABILITIES; POSITIVE BTI (PBTI); SATURATION DRAIN CURRENT;

GATE DIELECTRICS;

DEGRADATION;

EID: 77956173971     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052343     Document Type: Article

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