High temperature annealing of Europium implanted AlN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 19, 2010, Pages 2907-2910

  Lorenz, K ^a,b   Magalhaes S ^a,c   Alves, E ^a,b   Peres, M ^c   Monteiro, T ^c   Neves, A J ^c   Bockowski M ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Aluminium Nitride; Implantation; Photoluminescence; Rare Earth; Rutherford Backscattering Spectrometry

Indexed keywords

ALN; ALUMINIUM NITRIDE; AMORPHOUS LAYER; DYNAMIC ANNEALING; FLUENCE RANGE; FLUENCES; HIGH TEMPERATURE HIGH PRESSURE; HIGH-TEMPERATURE ANNEALING; IMPLANTATION; IMPLANTATION DAMAGE; LOW DAMAGES; LOW PRESSURES; NITROGEN ATMOSPHERES; OUT-DIFFUSION; PHOTOLUMINESCENCE MEASUREMENTS; PL INTENSITY; RED-LIGHT EMISSION; RUTHERFORD BACK-SCATTERING SPECTROMETRY; ULTRAHIGH PRESSURE;

ALUMINUM; ALUMINUM COMPOUNDS; ANNEALING; BACKSCATTERING; EUROPIUM; LUMINESCENT DEVICES; NITRIDES; PHOTOLUMINESCENCE; RARE EARTHS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETRY;

ATMOSPHERIC TEMPERATURE;

EID: 77956172685     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.05.003     Document Type: Conference Paper

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