Optical doping of AlN by rare earth implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 307-310

  Lorenz, K ^a   Alves, E ^a   Monteiro, T ^b   Soares, M J ^b   Peres, M ^b   Smulders, P J M ^c  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

AlN; Implantation; Photoluminescence; Rare earth; RBS

Indexed keywords

ANNEALING; DOPING (ADDITIVES); GALLIUM NITRIDE; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUENCHING; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

DEFECT COMPLEXES; IMPLANTATION; LATTICE DAMAGE; RARE EARTH;

ALUMINUM NITRIDE;

EID: 28544440627     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.08.037     Document Type: Conference Paper

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