Er doping of AIN during growth by metalorganic molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 14, 1996, Pages 2083-2085

  MacKenzie, J D ^a   Abernathy, C R ^a   Pearton, S J ^a   Hommerich U ^b   Wu, X ^b   Schwartz, R N ^c   Wilson, R G ^c   Zavada, J M ^d  

^a University of Florida   (United States)

^b HAMPTON UNIVERSITY   (United States)

^c Hughes Aircraft Co   (United States)

^d U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001523333     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116887     Document Type: Article

References (9)

1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys. Lett. 10B, L1332 (1995).
2. P. N. Favennec, H. L'Haridon, D. Moutonnet, and Y. L. Guillo, Electron. Lett. 25, 718 (1989).
3. J. M. Zavada and D. Zhang, Solid-State Electron. 38, 1285 (1995).
4. R. G. Wilson, R. N. Schwanz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, Appl. Phys. Lett. 65, 992 (1994).
5. J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, V. Krishnamoorthy, S. Bharatan, K. S. Jones, and R. G. Wilson, Appl. Phys. Lett. 67, 253 (1995).
6. P. N. Favennec, H. L'Haridon, D. Moutonnet, M. Salvi, and M. Gauneau, Jpn. J. Appl. Phys. 29, L524 (1990).
7. J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y. Xie, J. M. Poate, and L. C. Kimmerling, J. Appl. Phys. 70, 2672 (1991).
8. J. E. Colon, D. W. Elsaesser, Y. K. Yeo, R. L. Hengehold, and G. S. Pomrenke, Mater. Res. Soc. Symp. Proc. 301, 169 (1993).
9. A. J. Neuhalfen and B. Wessels, Appl. Phys. Lett. 59, 2317 (1991).