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Applied Physics Letters

Volumn 93, Issue 6, 2008, Pages

Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation

(4) Nepal, N a Zavada, J M a Lee, D S b Steckl, A J b

a North Carolina State University (United States)

b 705 Engineering Research Center (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AIR POLLUTION; BINDING ENERGY; CORUNDUM; CRYSTAL GROWTH; DYNAMICS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM ALLOYS; HETEROJUNCTIONS; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; QUENCHING; RARE EARTH ELEMENTS; SEMICONDUCTOR QUANTUM WELLS;

BAND-GAP EXCITATION; CHARGE TRAPPING; CONDUCTION BANDS; EMISSION LINES; EPILAYERS GROWN; ON DYNAMICS; PHOTOLUMINESCENCE SPECTRUM; RARE EARTHS; SOLID-SOURCE MOLECULAR BEAM EPITAXY; TEMPERATURE DEPENDENCES; TI: SAPPHIRE LASERS; U V REGION; ULTRA-VIOLET; ULTRAVIOLET EMISSIONS; UV EMISSIONS;

EMISSION SPECTROSCOPY;

EID: 49749106313 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2970993 Document Type: Article

Times cited : (14)

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