Improvements of surface morphology and sheet resistance of AlGaN/GaN HEMT structures using quasi AlGaN barrier layers

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 168-171

  Kawakami, Y ^a,b   Shen, X Q ^a   Piao, G ^a   Shimizu, M ^a   Nakanishi, H ^b   Okumura, H ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

A1. Surface structure; A3. Molecular beam epitaxy; A3. Superlattice; B1. Nitride

Indexed keywords

ELECTRIC PROPERTIES; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SUPERLATTICES; SURFACE STRUCTURE;

HIGH FREQUENCY DEVICES; LOW SHEET RESISTANCE; SHEET RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847279749     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.031     Document Type: Article

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