Role of oxygen atoms in the growth of magnetron sputter-deposited ZnO films

Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

  Jie, Jin ^a   Morita, Aya ^a   Shirai, Hajime ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AR PLASMAS; CHEMICAL ANNEALING; EXPOSURE CONDITIONS; GROWING SURFACES; INTERSTITIAL DEFECTS; LAYER-BY-LAYER TECHNIQUES; MAGNETRON SPUTTER; OXYGEN ATOM; OXYGEN DIFFUSION; PLASMA EXPOSURE; THERMAL-ANNEALING; ZNO FILMS; ZNO LAYERS;

ATOMS; CRYSTALLIZATION; MAGNETRONS; METALLIC FILMS; OXYGEN; SURFACE DEFECTS; ZINC; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 77955912842     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3457867     Document Type: Article

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