Properties of ZnO epitaxial layers and polycrystalline films prepared by metalorganic molecular beam epitaxial apparatus using diethylzinc and water as precursors

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 481-485

  Terasako, Tomoaki ^a   Ishiko, Yousuke ^a   Saeki, Keisuke ^a   Yudate, Shinji ^a   Shirakata, Sho ^a  

^a EHIME UNIVERSITY   (Japan)

Author keywords

A3. Chemical beam epitaxy; A3. Metalorganic molecular beam epitaxy; B1. Oxides; B1. Zinc compounds; B2. Semiconducting II VI compounds

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SUBSTRATES; ZINC OXIDE;

DIETHYLZINC (DEZN); FULL WIDTH AT HALF MAXIMUM (FWHM); NEAR BAND EDGE (NBE) EMISSION; POLYCRYSTALLINE FILMS;

FILM GROWTH;

EID: 33846423537     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.063     Document Type: Article

References (15)

1. Tsukazaki A., Ohtomo A., Onuma T., Ohtani M., Makino T., Sumiya M., Ohtani K., Chichibu S.F., Fuke S., Segawa Y., Ohno H., Koinuma H., and Kawasaki M. Nat. Mater. 4 (2005) 42
2. Triboulet R., and Perrière J. Prog. Crystal Growth Charact.Mater. 47 (2003) 65
3. Almamun Ashrafi A.B.M., Ueta A., Avramescu A., Kumano H., Suemune I., Ok Y.-W., and Seong T.-Y. Appl. Phys. Lett. 76 (2000) 550
4. Chen Y., Bagnall D.M., Koh H., Park K., Hiraga K., Zhu Z., and Yao T. J. Appl. Phys. 84 (1998) 3912
5. Sakurai K., Kanehiro M., Nakahara K., Tanabe T., Fujita S., and Fujita S. J. Crystal Growth 209 (2000) 522
6. Fons P., Iwata K., Niki S., Yamada A., and Matsubara K. J. Crystal Growth 201-202 (1999) 627
7. Shirakata S., Saeki K., and Terasako T. J. Crystal Growth 237-239 (2002) 528
8. Tsurumi T., Nishizawa S., Ohashi N., and Ohgaki T. Jpn. J. Appl. Phys. 38 (1999) 3682
9. Vispute R.D., Talyansky V., Choopun G., Sharma R.P., Venkatesan T., He M., Tang X., Halpern J.B., Spencer M.G., Li Y.X., Salmanca-Riba L.G., Iliadis A.A., and Jones K.A. Appl. Phys. Lett. 73 (1998) 348
10. Vanheusedn K., Warren W.L., Seager C.H., Tallant D.R., Voigt J.A., and Gnadle B.E. J. Appl. Phys. 79 (1996) 7983
11. Leiter F.H., Alves H.P., Hofstaetter A., Hofmann D.M., and Meyer K. Phys. Stat. Sol. B 226 (2001) R4
12. Oda S., Tokunaga H., Kitagawa N., Hanna J., Shimizu I., and Kokado H. Jpn. J. Appl. Phys. 24 (1985) 1607
13. Studenikin S.A., Golego N., and Cocivera M. J. Appl. Phys. 83 (1998) 2104
14. Wang Y.G., Lau S.P., Lee H.W., Yu S.F., Tay B.K., Zhang X.H., and Hng H.H. J. Appl. Phys. 94 (2003) 354
15. Kang H.S., Kim J.W., Lim S.H., Chang H.W., Kim G.H., Kim J.H., and Lee S.Y. Superlattices Microstruct. 39 (2006) 193