Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide

ACS Nano

Volumn 4, Issue 6, 2010, Pages 3356-3362

  Rinkiö, Marcus ^a,b   Johansson, Andreas ^a   Kotimaki, Ville ^a   Törmä, Päivi ^b  

^a UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^b AALTO UNIVERSITY   (Finland)

Author keywords

Carbon nanotubes; Field effect transistors; High ; Hysteresis; Negative differential resistance; Oscillator; Quantum dot

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CURRENT PEAK; DRAIN-SOURCE VOLTAGE; FULLY SCALABLE; GATE OXIDE; HIGH-K GATE OXIDE; NANOSCALE ELECTRONIC DEVICES; NANOTUBE CHANNELS; NEGATIVE DIFFERENTIAL RESISTANCES; OSCILLATOR; QUANTUM DOT; ROOM TEMPERATURE;

CARBON NANOTUBES; DRAIN CURRENT; GATES (TRANSISTOR); HYSTERESIS; NANOSENSORS; NEGATIVE RESISTANCE; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS;

FIELD EFFECT TRANSISTORS;

NANOMATERIAL; OXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; IMPEDANCE; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC IMPEDANCE; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; OXIDES; PARTICLE SIZE; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC;

EID: 77955855681     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn100208v     Document Type: Article

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