Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

IEEE Transactions on Nuclear Science

Volumn 57, Issue 4 PART 1, 2010, Pages 1933-1939

  Arora, Rajan ^a   Simoen, Eddy ^b   Zhang, En Xia ^c   Fleetwood, Daniel M ^c   Schrimpf, Ronald D ^c   Galloway, Kenneth F ^c   Choi, Bo K ^c   Mitard, Jerome ^b,d   Meuris, Marc ^b   Claeys, Cor ^b,d   Madan, Anuj ^a   Cressler, John D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b IMEC   (Belgium)

^c VANDERBILT UNIVERSITY   (United States)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Diode; Germanium; MOSFET; p+ n; x ray

Indexed keywords

CURRENT INCREASE; DOPING DENSITIES; HALO DOPING; JUNCTION DIODE; JUNCTION LEAKAGES; MOBILITY DEGRADATION; MOSFET; MOSFETS; OFF CURRENT; P-MOSFETS; P+-N; PROCESS VARIATION; RADIATION-INDUCED; SI CAPPING LAYER; TOTAL DOSE;

DIODES; GERMANIUM; LEAKAGE CURRENTS; MONOLAYERS; MOSFET DEVICES; SILICON; VOLTAGE CONTROL;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955799447     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2043745     Document Type: Conference Paper

References (19)

1. C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, "Germanium MOS capacitors incorporating ultrathin high- gate dielectric," IEEE Electron Device Lett., vol.23, pp. 473-475, 2002.
2. Germanium-Based Technologies: From Materials to Devices,C. Claeys and E. Simoen, Eds. The Netherlands: Elsevier Science, 2007.
3. J. Mitard, B. D. Jaeger, F. E. Leys, G. Hellings, K. Martens, G. Eneman, D. P. Brunco, R. Loo, J. C. Lin, D. Shamiryan, T. Vandeweyer, G. Winderickx, E. Vrancken, C. H. Yu, K. De Meyer, M. Caymax, L. Pantisano, M. Meuris, and M. M. Heyns, "Record Ion/Ioff performance of 65 nm Ge p-MOSFET and novel Si passivation scheme for improved EOT scalability," in Proc. IEEE Int. Electron Devices Meeting (IEDM), 2008, pp. 1-4.
4. J. Mitard, C. Shea, B. D. Jaeger, A. Pristera, G. Wang, M. Houssa, G. Eneman, G. Hellings, W.Wang, J. Lin, F. Leys, R. Loo, G.Winderickx, E. Vrancken, A. Stesmans, K. D. Meyer,M. Caymax, L. Pantisano, M. Meuris, and M. Heyns, "Impact of EOT scaling down to 0.85 nm on 70 nm Ge-pFETs technology with STI," in Proc. Symp. VLSI Technology, 2009, pp. 82-83.
5. G. Nicholas, B. D. Jaeger, D. P. Brunco, P. Zimmerman, G. Eneman, K. Martens, M. Meuris, and M. M. Heyns, "High-performance deep submicron Ge pMOSFETs with halo implants," IEEE Trans. Electron Devices, vol.54, pp. 2503-2511, 2007.
6. M. Caymax, M. Houssa, G. Pourtois, F. Bellenger, K. Martens, A. Delabie, and S. Van Elschot, "Interface control of high-gate dielectrics on Ge," Appl.Surface Sci., vol.254, pp. 6094-6099, 2008.
7. K. Martens, C. O. Chui, G. Brammertz, B. D. Jaeger, D. Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes, and G. Groeseneken, "On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates," IEEE Trans. Electron Devices, vol.55, pp. 547-556, 2008.
8. J. R. Schwank, M. R. Shaneyfelt, P. Paillet, D. E. Beutler, V. Ferlet- Cavrois, B. L. Draper, R. A. Loemker, P. E. Dodd, and F. W. Sexton, "Optimum laboratory radiation source for hardness assurance testing," IEEE Trans. Nucl. Sci., vol.48, pp. 2152-2157, 2001.
9. H. Ohyama, K. Sakamoto, H. Sukizaki, K. Takakura, K. Hayama, M. Motoki, K. Matsuo, H. Nakamura, M. Sawada, M. Mirorikawa, S. Kuboyama, B. D. Jaeger, E. Simoen, and C. Claeys, "Radiation damage of Ge-on-Si devices," Mater. Sci. Semicond. Processing, vol.11, pp. 217-220, 2008.
10. S. K. Dixit, X. J. Zhou, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, R. Choi, G. Bersuker, and L. C. Feldman, "Radiation induced charge trapping in ultrathin HfO -based MOSFETs," IEEE Trans. Nucl. Sci., vol.54, pp. 1883-1890, 2007.
11. G. Eneman, M. Wiot, A. Brugere, O. S. Casain, S. Shonde, D. P. Brunco, B. D. Jaeger, A. Satta, G. Hellings, K. D. Meyer, C. Claeys, M. Meuris, M. M. Heyns, and E. Simoen, "Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium junctions," IEEE Trans. Electron Devices, vol.55, pp. 2287-2296, 2008.
12. S. R. Kulkarni, R. D. Schrimpf, K. F. Galloway, R. Arora, E. Simoen, and C. Claeys, "Total ionizing dose effects on Ge pMOSFETs with high-K gate stack: On/Off current ratio," IEEE Trans. Nucl. Sci., vol.56, pp. 1926-1930, 2009.
13. E. Simoen, C. Claeys, and J. Vanhellemont, "Defect analysis in semiconductor materials based on p-n junction diode characteristics," Defects and Diffusion Forum, vol.261-262, pp. 1-24, 2007.
14. Y. Murakami and T. Shingyouji, "Separation and analysis of diffusion and generation components of pn junction leakage current in various silicon wafers," J. Appl. Phys., vol.75, pp. 3548-3552, 1994.
15. D. M. Fleetwood, P. S.Winokur, R. A. Reber, Jr., T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, "Effects of oxide traps, interface traps, and border traps on MOS devices," J. Appl. Phys., vol.73, pp. 5058-5074, 1993.
16. D. M. Fleetwood, T. L. Meisenheimer, and J. H. Scofield, "Noise and radiation effects in MOS devices," IEEE Trans. Electron Devices, vol.41, pp. 1953-1964, 1994.
17. T. L. Meisenheimer and D. M. Fleetwood, "Effect of radiation-induced charge on noise in MOS devices," IEEE Trans. Nucl. Sci., vol.37, pp. 1696-1702, 1990.
18. D. M. Fleetwood, M. J. Johnson, T. L. Meisenheimer, P. S. Winokur, W. L.Warren, and S. C.Witczak, " noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices," IEEE Trans. Nucl. Sci., vol.44, pp. 1810-1817, 1997.
19. E. Simoen, A. Firrinceli, F. Leys, R. Loo, B. D. Jaeger, J. Mitard, and C. Claeys, "Low frequency noise assessment of the silicon passivation of Ge pMOSFETs," Thin Solid Films, accepted for publication.